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RFMD`s latest module unites silicon and GaAs technologies

The firm's latest module utilises gallium arsenide HBT and pHEMT technologies for Smart Metering/Smart Energy applications
RF Micro Devices is marketing the RFFM6903 front end module (FEM).

The module integrates the firm's GaAs HBT, GaAs pHEMT and silicon CMOS technologies.



RFMD's highly-integrated RFFM6903 FEM meets or exceeds the system requirements for AMI/AMR smart meter applications operating in the 868MHz - 960MHz frequency band.

The FEM supports multiple applications, including Smart Energy/advanced metering infrastructure (AMI), portable battery-powered equipment, and general 868/915MHz ISM band systems.

The feature-rich RFFM6903 integrates a +30.5dBm power amplifier (PA) with a Tx harmonic output filter in the transmit path, a Tx path bypass mode with harmonic filter, and a low-noise amplifier (LNA) with bypass mode in the receive path and is packaged in a 6mm x 6mm x 1mm laminate package.

The RFFM6903 also includes a low insertion loss, high isolation, single-pole three-throw (SP3T) switch and separate Rx/Tx 50 Ω ports that simplify matching and provide input and output signals for both the Tx and Rx paths. In the receive path, the Rx chain provides 16dB of typical gain with only 5mA of current and an excellent noise figure of 1.7dB.

Rohan Houlden, general manager of RFMD's Wireless Connectivity business unit, says, "The RFFM6903 is ideal for advanced metering systems requiring high efficiency and minimum output power of 1 Watt. The high level of integration and industry-leading form factor minimise the footprint and reduce the number of discrete components and manufacturing assembly costs. The fully-integrated front end module design approach shortens customer design time and accelerates time-to-market, while delivering industry leading product performance."

The RFFM6903 is now available for sampling and mass production.

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